List of Tools in the respective location

ATOMIC FORCE MICROSCOPY (AFM)

 

System Overview

The Park NX20 AFM features the world’s only True Non-Contact™ mode, allowing users to take both repeated measurements without damaging sample surface while preserving tip sharpness. Reputed as the world’s most accurate large sample AFM, The Park NX20 is a leading nano metrology tool for failure analysis and large sample research.

Technical Specifications

  • Large sample measurement of up to 300 mm.
  • Park SmartScan™ – powerful operating software automates processes which drastically improve efficiency and guides user through every step of the imaging process.

Incorporated Scanning Modes

  • True Non-Contact™ mode
  • Dynamic contact mode
  • Contact mode
  • Magnetic Force Microscopy (MFM)
  • Phase Imaging
  • Lateral Force Microscopy (LFM)
  • Force-Distance (F/D) Spectroscopy
  • Force volume Imaging
  • Electricstatic Force Microscopy (EFM)
  • Piezoresponse Force Microscopy (PFM)
  • Scanning Kelvin Probe Microscopy (SKPM)
  • Force Modulation Microscopy (FMM)
  • Nanoindentation
  • Nanolithography
  • Variable Enhanced Conductive AFM (VECA)
  • Scanning Capacitance Microscopy (SCM)

AFM, MFM, CAFM, SCM

Location: E6-01-02, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

CHEMICAL MECHANICAL PLANARIZATION

 

System Overview

    • Metal and dielectric planarization(Cu Al, SiO2, SiN..)
    • Within wafer non-uniformity 5%
    • Run to run non-uniformity 5%
    • Finishing surface roughness 1nm

Location: E6-01-02, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

FTIR

 

System Overview

 

Location: E6-01-01, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

ELIONIX ELECTRON BEAM LITHOGRAPHY

 

System Overview

The EBL system is used to directly write fine features in resist with feature’s line widths smaller than 8 nm. The system has a custom stage with 10mm of Z-axis travel for writing over curved surfaces. The system can handle small samples through 200mm (8 inch) wafers and 7″ x 7″ mask plates.

Technical specifications:

  • 50 & 100kV beam energy
  • Electron beam current 50 pA – 200 nA
  • Thermal field emission source
  • 1.9 nm Gaussian beam size at 100 KV
  • Automated aperture change
  • 1mmx1mm deflection field size
  • 100 MHz pattern generator frequency
  • Stage has 210mm X-Y travel and 10mm Z travel
  • 1.5 Å accuracy on stage location
  • External alignment microscope
  • Proximity correction
  • Small pieces to 200mm (8 inch) wafers
  • 7″ x 7″ mask plates
  • Resolution: < 8nm line width @100 kV with 100 μm field size
  • Stitching Accuracy: <±10 nm @100 kV with 100 μm field size
  • Overlay accuracy: <±10 nm @100 kV with 100 μm field size

Location: E6-01-01, Class 10 Cleanroom

Contact: e6nanofab@nus.edu.sg

LASER WRITER

 

System Overview

DWL 66is a high resolution pattern generator for direct writing and mask making.

Available Resource

AZ 1512, AZ1518

Technical Specifications

  • Direct patterning for maximum substrate size: 9” x 9”
  • Minimum substrate size: 10 x 10 mm²
  • Maximum write area: 200 x 200 mm²
  • Substrate thickness: 0 to 6 mm
  • Illumination source: Diode Laser (405 nm) for standard positive resist exposure
  • Direct writing with minimum feature size of 0.6 μm
  • High accuracy overlay alignment of 400 nm
  • Vector Exposure Mode offers five different line widths
  • Complex topographies patterning capability for micro-optical
  • Components or any other gray scale application
  • Interferometer stage position resolution: 10 nm

Location: E6-01-03, Class 10 Cleanroom

Contact: e6nanofab@nus.edu.sg

RAPID THERMAL PROCESSING (AKA VACCUM ANNEAL, RTP)

 

System Overview

High temperature annealing for various materials

Technical specifications

  • Wafer size: up to 8” wafer
  • Temperature up to 1050 degC
  • Ramp rate up to 300degC/sec
  • 6 individual controllable thermal zone by infrared lamp
  • Heat uniformity +/-2C for 8 inch wafer 1000C
  • Anneal in N2, O2
  • Annealing under vacuum environment (10e-6 torr)

Location: E6-01-01, Class 10.

Contact: e6nanofab@nus.edu.sg

 

 

ULTRA HIGH VACUUM METAL AND DIELECTRIC SPUTTERING

 

System overview

  • Close proximity physical vapour deposition using magnetrons technology
  • Target-to-substrate distance adjustable between 50-100mm.
  • Accepts 3” diameter target size
  • Accepts various sample sizes and max 8” wafer
  • DC and RF sputter capability
  • DC and RF substrate bias with rotation
  • Confocal sputtering available

Targets

Ti, Mo, W, SiO2, Pt, ZnO

Technical specification

  • Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environment
  • PID temperature controller for substrate with +/- 1 degree C temp. stability
  • DC sputter power up to 1500W
  • RF sputter power up to 600W@ 13.56 mHz
  • Substrate RF bias 110W@ 13.56 mHz with rotation
  • Substrate carrier 3″ working distance adjustment (incident ion energy from 50eV to 300eV)
  • Process gases, Ar, N2, O2
  • Metallic, oxide and composite targets
  • Build in RHEED for film deposition monitor
  • Build in RGA for leak detection
  • Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%

Location: E6-01-01, class 10.

Contact: e6nanofab@nus.edu.sg

 

ULTRA HIGH VACUUM E-BEAM EVAPORATION

 

System overview

  • Able to handle up to 8” wafers size
  • For deposition metals, dielectrics, super-lattices, alloys
  • Substrate heating up to 800°C capable of being heated in an O2 environment
  • Crystal deposition controller for co-deposition

Targets

SiO2, Pt, Al, Au, Ti, TiN, Pd,Ag

Technical specifications

  • Chamber size:  36″ high x 24″ ID
  • 10 kW High Voltage Power Supplies for e-beam sourceDual-beam covering 4 crucibles for co-deposition and multi-layer deposition
  • Thermal evaporation source with molybdenum resistive boats, 3kW Power Supply
  • Substrate rotation and 300W RF/DC biasing (incident ion energies of 50 to 300 eV)
  • PID temperature controller for substrate with +/- 1 degree C temprature stability
  • Build in RGA

Location: E6-01-01, class 10.

Contact: e6nanofab@nus.edu.sg

 

 

MAGEST S200 – MULTI CHAMBER SPUTTERING SYSTEM

 

Magest S200 is a batch-processing type multi-chamber sputtering system correspond to MRAM production.

Targets: Mg, Cu, W, Fe60Co20B20, Fe90Co10, Fe80B20, Co, Pt, Ru, Ta, Ti, MgO

Processing Type : Magnetic nanofabrication

System Overview

This system consists of Autoloader, Transfer Chamber, Pre-clean Chamber , RTP Chamber & Sputter chamber sections.

  • Autoloader: Dual-arm ROBOT, Alignment station, 2 Stage cassette Interface, metal wafer stocker for 200mm wafer
    (25 pcs. of wafers capacity)
  • Transfer Chamber: Wafer transfer robot Keytran-IV (KRC-4000Z) Dual arm
  • Pre-clean Chamber: 2 gas Lines (Ar 100sccm, Ar 5 sccm), LT-ICP Electrode and Ceramic Shield.
    • ESC hot plate stage and RF Power supply
  • RTP Chamber: (Ar 2SLM, N2 100sccm, O2 5sccm, Ar 100sccm), Quartz Pin stage, Gold Image Furnace (9zone Lamp)
    • Sputter Chambers: The system has four sputter chambers with wafer stage rotation. Each sputter chamber has
      a sputter down mechanism with a permanent magnet rotation magnetron cathode. The sputter chamber can
      form the continual membrane of maximum of 3 layer loads “triple gun cathode”.
    • Sputter Chamber-1 (DC/RF Sputter): (Ar 100 sccm, Ar 5 sccm),
    • Sputter Chamber-2 (DC Sputter): (Ar 100 sccm, Ar 5 sccm),
    • Sputter Chamber-3 (DC Co-Sputter): (Ar 100 sccm, N2 50 sccm, Ar 5 sccm, Kr 100 sccm), ESC hot plate stage
    • Sputter Chamber-4 (DC/RF Sputter): (Ar 100 sccm, N2 100sccm, Ar 5 sccm),
    • Control System: This system is fully automatically controlled by ULVAC’s CyberCELL, and this software has a
      flexible design consisting of fore transfer modes: series, parallel, series/parallel and random access. Operation
      is performed only on a Cluster Tool Controller (CTC) that has operator—friendly-human-interface design.

Location: E6-01-02, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

SCIA COAT 200 – ION BEAM DEPOSITION AND ETCHING

 

System Overview

The  SCIA Coat 200 is designed for homogeneous coating of high precision optics such as X-ray mirrors and optical filters with the technology of Dual Ion Beam Deposition (DIBD). The system is also equipped with a RF350-e ion beam source for etching process.

Technical Specifications

  • Cylindrical ICP ion beam source RF350-e, beam diameter of 350 mm at extraction grid,
  • Inductively coupled plasma (ICP) based plasma excitation with RF generator at 4.00 MHz
  • ion energy: < 100 eV; Max. ion energy: > 1500 eV
  • Ion current density up to 1 mA/cm² with flat grid system
  • Wafer chuck for 200 mm wafers
  • Substrate rotation up to 20 rpm, Substrate holder tilt between 0° – 170° in 0.1° steps
  • A standard 4-port handling robot for fully automatic handling of wafers
  • Load-lock for loading of three 200 mm wafers
  • HAL IMP 301/3F Ion Milling End Point Detection System
  • With Secondary Ion Mass Spectroscopy (SIMS), an in-situ measurement of sputtered material from substrate can be done.
  • The system is controlled by Windows 7 with fully SEMI-standard compatible software suite.
  • Etch rate: > 8 nm/min, uniformity: ≤ 8 % 3σ, reproducibility (10 runs) ≤ 3 % 3σ.
  • Deposition rate (Ta) > 6 nm/min, uniformity: ≤ 3 % 3σ , reproducibility (10 runs) ≤ 2 % 3σ

Location: E6-01-02, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

MAGNETIC ANNEALING SYSTEM

 

System Overview

The Magnetic Annealing System is an 8.0 Tesla Magnetic Annealing System for pilot line and R&D usage.

Technical Specifications

• Magnetic field: 0 to 8.0 Tesla
• Wafer size: Ø2” (51 mm) circular diameter & 5 product wafers
• Wafer orientation: In plane or perpendicular to magnetic field direction
• Field homogeneity: -2/+2% over product wafers
• Field uniformity: Angle <+/-1.5° over product wafers
• Set-point accuracy: <5 mTesla
• Field stability: <0.1% of field value
• Field reproducibility: <5 mTesla
• Temperature range: 200 – 450°C
• Max wafer exit temp: 60°C
• Thermal uniformity: < ±3°C in sample volume
• Set point accuracy: ±1.5°C
• Cross wafer uniformity: ±2°C
• Cross stack uniformity: ±1.5°C

Location: E6-01-02, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

MASK ALIGNER MA8

 

System Overview

The mask aligner operates either in contact or in proximity mode and able to handle a wide range of substrate sizes from small pieces up to 200mm wafers.

Available Resource

  • UV and DUV, AZ1512 and AZ4110
  • Masks are not provided

Technical Specifications

  • Able to handle substrate size of 25 mm round up to 200 mm round and
    200 x 200 mm square
  • Capable to handle mask size ranging from 2”x2” up to 9”x9”
  • DC lamps HG 350 W/S, HG 500 W, HG-XE 500 W
  • X, Y, THETA- alignment stage for motorized operation, resolution 0.1um
  • Alignment gap programmable from 1 to 1,000 micron, resolution at 1 micron
  • MO optics for Highest Uniformity, Diffraction reduction, Focus depth increase
  • Substrate Conformal Imprinting Lithography (SCIL) / PDSM Imprinting Lithography
  • Imprint lithography up to 150mm
  • Wavelength: 350 to 1200 nm
  • TSA alignment accuracy: <0.5μm
  • BSA alignment accuracy:<1.0 um
  • Infra-red (IR) Alignment , BSA alignment accuracy ≤ 1µm
  • UV uniformity: +/-3.5% for 8” wafer
  • Patterning of structures resolution below 0.8 μm
  • Alignment accuracy down to 0.25 μm
  • (SCIL) / PDSM Imprinting Lithography resolution better than 100nm

Location: E6-01-03, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

SURFACE PROFILER

 

System Overview

  • Breakthrough scan stability and industry-leading accuracy
  • 64-bit, parallel processing Vision64 software architecture delivers up to 10 times faster data analyses
  • Self-aligning styli enables effortless tip exchange
  • Single sensor design offers low force and extended range in a single platform

Location: E6-01-02, Cleanroom

Contact: e6nanofab@nus.edu.sg

 

FOUR POINTS PROBE

 

System Overview

Enable fast, accurate and reliable resistivity testing.

Existing Probe head

  • C4S-54/5S
    PROBE 4PT: .050,40-70,.005R,OS (Osmium)

Optional Probe Head (When required only)

  • C4S-54/5S
    PROBE 4PT: .050,40-70,.005R,WC (Tungsten carbide)
Material to be measured Tip material Tip radii Spring measure
Silicon slices Silicon ingots Tungsten carbide 50 µm 2 mils 70 to 180 gms per tip
Semiconductor sheet resistance Tungsten carbide or osmium 50 and 125 µm 2&5 mils 40 to 70 gms per tip
Thin metallic films Osmium 125 & 50 µm 5&10 mils 40 to 70 gms per tip
Gallium arsenide Gallium phosphide Arsenide Tungsten carbide 17.5 µm            0.7 mils 70 to 180 gms per tip

 

Location: E6-01, Cleanroom

Contact: e6nanofab@nus.edu.sg

 

OPTICAL MICROSCOPE

System Overview

The Nikon Eclipse L200 series performs exceptionally precise optical inspection of wafers, photo masks, reticles and other substrates.

Main Body

Built-in Episcopic Illumination; built-in power sources for motorized control; light intensity control; aperture diaphragm control.

Focusing Mechanism

  • Cross travel: 29mm
  • Coarse: 12.7mm per rotation (torque adjustable, refocusing mechanism)
  • Fine: 0.1mm per rotation (in 1µm increments)
Episcopic Illuminator
  • 12V/100W halogen lamp light source built-in; otorized aperture diaphragm
  • fixed field diaphragm (with focus target)
Eyepiece Tube
  • L2TT Ultrawide tilting trinocular eyepiece tube (tilt angle 0-30°);F.O.V: 25mm
  • 2-way optical path changeover
Stage
  • 8 x 8 Stage; stroke: 205 x 205mm
  • Coarse/fine movement changeover possible
  • Fixed-position X-Y fine-movement controls
Eyepieces
  • CFI eyepiece lens series
Objectives
  • CFI60 LU/L Plan series

Location: E6-01-01

Contact: e6nanoab@nus.edu.sg

 

SOLVENT WET BENCH

 

System Overview

The Solvent bench is designed for substrate cleaning, developing pattern after exposure, lift–off pattern transfer schemes and other fabrication operations using solvents.

Technical specifications

  • Stainless steel perforated work space
  • Stainless steel solvent sinks
  • DI Water and N2 Teflon gun
  • Differential pressure gauge to measure the difference in pressure between the bench exhaust and the room

Location: E6-01-03, Class 10 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

UV OZONE CLEANER

System Overview

The compact Samco UV-1 Ozone Cleaner utilizes a unique combination of ultraviolet light, ozone and controlled heating to etch organic materials.

Technical Specifications

  • Substrate Size – upto 150mm (6 inch)
  • Maximum Sample Thickness – 5mm (17mm, between stage and
    UV lamp)
  • UV light Source – Hot cathode, low-pressure mercury vaper lamp (primary wavelengths:254 nm and 185 nm)
  • Ozone generator – Silent discharge type; at least 5g/m3 at 0.5 liter/min oxygen flow rate
  • UV-lamp and Ozone generator switches
    – can be switched ON or OFF during the process
  • Substrate heater – Ambient to 300°C
  • Digital Timer –  0 to 99 min:59 sec
  • Ozone killer – Common metal honeycomb type ozone scrubber removes residual ozone in the process gas exhaust stream. Concentration of ozone at the exhaust is less than 0.1PPM
  • Dimensions – 450mm(W)x400mm(D)x411mm(H)

Applications

  • Removing organic contamination
  • Pre-cleaning wafers prior to deposition
  • Descumming photoresist and polyimide
  • Cleaning prior to wafer bonding
  • Surface modification for better adhesion
  • UV curing
  • Growth of thin stable oxide films (GE, GaAs, Si)

Location: E6-01-09, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

HOT PLATE

 

System Overview

Hot plates are hotplates for soft bake and post exposure bake (PEB) used for baking photoresist which improves adhesion and dry etch resistance. Soft bake to drive off solvents and to solidify the photoresist film.

Technical Specifications

  • Up to 200mm substrates
  • Fast heating
  • Temperature up to 250 degree C
  • Small foot print
  • Easy to operate.

Location: E6-01-03, Class 10 Cleanroom

Contact: e6nanofab@nus.edu.sg

 

SPIN COATER

 

System Overview

A procedure used to deposit uniform thin films to flat substrates. Small amount of coating material is applied on the center of the substrate, which is either spinning at low speed or not spinning at all. The substrate is then rotated at high speed in order to spread the coating material by centrifugal force.

Spin coater involves accurately dispensing a liquid onto a flat substrate and then spinning at high speed to achieve a uniform film.

Technical Specifications

  • Speeds of up to 6,000 RPM.
  • Irregular sizes 5-50 mm
  • Handle up to 8” wafers on a vacuum chuck.

Location: E6-01-03, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

Location: E6-02-07

Contact: e6nanofab@nus.edu.sg

MASK ALIGNER MA6

 

System Overview

ModelKarl Suss MA6

Technical Specifications

  • UV400 Exposure Optics
  • Wavelength: 365nm and 405nm
  • Substrate Size: irregular to standard 2” dia wafer
  • Mask Size: Typical 3” square
  • Wafer Thickness: < 4 mm

 

 

RAPID THERMAL ANNEALING (RTA)

MINI LAMP ANNEALER MILA-3000

Small all-in-one desktop RTA for high density semiconductor fabrication process.

  • Rapid heating/cooling of the infrared gold image furnace
  • High precision temperature control
  • Clean heating and versatile atmosphere selection
  • Max Wafer Size: Less than (20 x 20) mm.

 

 

 MOTORIZED DIE BONDER

 

System Overview

The FINEPLACER sigma combines sub-micron placement accuracy with a 450 x 150 mm working area and bonding forces up to 500 N. The system is ideal for all types of precision die bonding and flip chip applications ready to be pushed toward wafer level. This includes complex 2.5D and 3D IC packages, Focal Plane Arrays (i.e. image sensors), MEMS/MOEMS, and more.

Technical specifications

  • Placement accuracy: ±0.5 µm
  • Field of view: 3.8 mm x 2.7 mm
  • Field of view resolution: 1µm / pix
  • Extended field of view: 83 mm x 2.7 mm
  • Component size (min): 0.07 mm x 0.07 mm
  • Component size (max): 100 mm x 100 mm
  • Substrate support (max): 300 mm x 300 mm
  • X-travel / resolution1: 2.5 mm / 1 µm
  • Y-travel / resolution1: 2.5 mm / 1 µm
  • Z-travel / resolution: 10 mm / 10 µm
  • Theta travel: ±15° (±2° fine travel)
  • Working area: 450 mm x 150 mm
  • Bonding force range: 0.2 – 40 N / 1 – 500 N
  • Heating temperature: 450 °C

Location: E6-02-09, Class 10,000

Contact: e6nanofab@nus.edu.sg

WET PROCESSING

Wet Bench (Solvent)

Di Water

Baking Oven

 

Spin Coater

PICOSUN ALD

 

System overview

  • Dual reaction chamber
  • Transfer chamber between deposition chambers
  • Able to handle up to 8” wafers size
  • Conformal coverage over 3D structures

Target

  • Al2O3
  • HfO, ZrO, TiN (Ready in May 19)

Technical specifications

  • Deposition of Metal Nitrides, Oxides and sulphides
  • Six precursor inputs per reactor accommodating solid, liquid and gas precursors
  • Continuous Mode and Plasma Mode available for each reactor
  • 300W ICP for plasma-enhanced process
  • Four plasma gases per reactor complete with MFCs
  • Deposition temperature up to 500ºC
  • Deposition uniformity:
    > Thermal Al2O3 – 1.5%
    > Plasma enhanced Al2O3 – 1.5%
  • High aspect ratio depositions:
    > Thermal – up to 2000:1
    > Plasma enhanced – up to 50:1

Location: E6-05-09, Cleanroom

Contact: e6nanofab@nus.edu.sg

 

PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD)

 

System Overview

  • Able to handle up to 8” wafers size   
  • High density deposition of Oxide, Nitride and amorphous Si

Target

SiN, SiO2, Si

Technical specifications

  • Large area gas distribution shower-head design for high uniformity
  • Up to 8 mass flow controlled gas lines
  • 300W, 13.56 MHz RF generator and automatic matching unit for high density film deposition
  • 500W 100KHz LF generator and manual matching for stress controlled SiN process
  • 240mm diameter resistance heated aluminium electrode for temperatures up to 400°C, grounded
  • Electrical chamber wall heating up to 80°C minimizing chamber wall deposition

Location: E6-05-09, Cleanroom

Contact: e6nanofab@nus.edu.sg

 

INTEGRATED ICP ETCH CLUSTERING SYSTEM

 

System Overview

The Integrated ICP Etch Cluster comprises Metal etch module, Dielectric etch module and III-V etch module. It is capable to handle 8” wafer with up to 8 mass flow controlled gas lines for each module.

 

1. The Metal Etch Module

Technical Specifications

  • Metal etch module (W, Al, AlN tested)
  • InP grating etch
  • Base pressure 1×10-6 torr or better
  • 300 mm diameter alumina discharge chamber
  • kW 2 MHz RF generator and automatic matching for ICP etch plasma
  • 300 W 13.56 MHz RF generator and automatic matching unit for bias
  • Cryo-cooled/electrically heated etch lower electrode, working temperature: -150 ºC – +400 ºC
  • Helium backing between wafer and lower electrode promoting heat transfer
  • Fixed height with axial lift for wafer transfer
  • Laser endpoint detector
  • Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
  • Bypassed gas line and MFC for toxic gas (Cl2, BCl3, HBr)
  • External gaspod gas line heating kit for low vapour pressure gases (BCl3)

2. Dielectric Module

Technical Specifications

  • Base pressure 1×10-6 torr or better
  • 300mm diameter alumina discharge chamber
  • kW 2 MHz RF generator and automatic matching unit for ICP etching source
  • 300 W 13.56 MHz RF generator and automatic matching unit for bias
  • Fluid heated/cooled electrode
  • Helium backing between wafer and lower electrode promoting heat transfer
  • Fixed height with axial lift for wafer transfer
  • Laser endpoint detector
  • Chamber Liner for effective etching and easier cleaning
  • Standard gas line and MFC for nontoxic gases (SF6, Ar, O2, N2, C4F8, CHF3)
  • Bypassed gas line and MFC for toxic gas (Cl2)

3. III-V Etch Module

Technical Specifications

  • Base pressure 1×10-6 torr or better
  • 300mm diameter alumina discharge chamber
  • 3kW 2MHz RF generator and automatic matching unit for ICP etching source
  • 600W 13.56MHz RF generator and automatic matching unit for bias
  • Cryo-cooled/electrically heated etch lower electrode, working temperature: -150ºC-+400 ºC
  • Rapid cooling from cryo to chiller mode, from 200°C to 20°C in 40 minutes
  • Helium backing between wafer and lower electrode promoting heat transfer
  • Fixed height with axial lift for wafer transfer
  • Laser endpoint detector
  • Chamber Liner for effective etching and easier cleaning
  • Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
  • Bypassed gas line and MFC for toxic gas (Cl2, BCl3, H2, CH4)
  • External gaspod gas line heating kit for low vapour pressure gases (BCl3)

Location
E6-05-09, Cleanroom

Contact
e6nanofab@nus.edu.sg

 

PLASMA ETCHER 

 

System Overview

Plasma Asher uses oxygen plasma to remove photoresist from wafers.

Technical specifications

  • Capable to handle 200 mm wafers
  • Gas Flows: O2= 1000 – 2000 sccm. N2 – 100 –500 sccm
  • μ-wave Power: 2.45GHz, 1000 watt, continuously adjustable
  • Base pressure: ≤0.5 mtorr
  • Operating pressure: 0.5- 5 mtorr
  • IR temperature measurement outside chamber
  • Optical Endpoint Detector (based on plasma intensity signal)
  • Platen Temperature: 100° – 300° C
  • Uniformity: Within Wafer: 2% – 5%
  • Wafer to Wafer: 2% – 4%
  • Ash Rate: min < 200Å – max ≥ 3 μm./min.

Location
E6-05-09, Cleanroom

Contact
e6nanofab@nus.edu.sg

 

ELLIPSOMETER

 

System Overview

An ellipsometer can be used to characterize many material properties, such as thickness, crystallinity, doping concentration, band gap, and refractive index. It measures the change in polarization of an incident light beam that interacts with and reflects off the sample and compares it to a model.

Technical Specification

  • High-resolution UV-VIS (230 nm – 900 nm) scanning spectrometer with FWHM bandwidth less than 0.5 nm.
  • High-resolution NIR extension up to 2500 nm: InGaAs detector directly adapted on the UV-Visible spectrometer, nominal wavelength range of 900 nm to 2500 nm, FWHM bandwidth less than 3 nm.
  • Automatic incidence angle range control: 12.5 to 90 degrees.
  • Independent adjustment of analyzer and polariser arms.
  • Microspot optics (theoretical spot dimensions: 365 µm × 470 µm at 75° on sample).
  • Ultra microspot option: additional slit allowing smaller spot size down to 60 µm at optical arm output (spot size on sample: 60 µm × 120 µm at 60°).
  • Automated sample stage enabling X-Y cartography of the sample. Includes special software for sample stage control, data collection, and graphic display.
  • Motorized Z allowing automatic focusing on the sample.
  • Accommodates samples up to 200 mm in diameter.


Location:
E6-05-09, Cleanroom (Yellow Zone)

Contact: e6nanofab@nus.edu.sg

 

FURNANCE

 

System Overview

Furnance system for wet and dry oxidation in the temperature range of 200 to 1200°C .

Availability: 3rd quarter, 2020

Location: E6-05-09, Cleanroom

Contact: e6nanofab@nus.edu.sg