List of Tools in the respective location

THERMAL EVAPORTOR 

 

Edward Evaporation System for Metal Deposition

Model: Edward Auto 306 Turbo 

Substrate size:
Irregular to standard 8”dia wafer

Metals:
Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.

The Application:

The heating is carried out by passing a large current
through a filament container (tungsten boat or material
coated tungsten rod), which has a finite electrical resistance.

Location: E6-02-08, Dry Lab.

Contact: e6nanofab@nus.edu.sg

 

FIB-SEM

 

System Overview

  • Process viewing Cut & See
  • Failure analysis

Technical Specifications

  • Electron Gun: High brightness Schottky emitter
  • Resolution in Standard mode (In-Beam SE): 0.7 nm at 15 kV ;1.4 nm at 1 kV; 1.7 nm at 500V Resolution in Beam Deceleration mode: 1.0 nm at 1 kV; 1.2 nm at 200 V
    • Magnification at 30kV: 4x– 1,000,000x
  • Maximum Field of View: 4.3 mm at WD analytical 5 mm; 7.5 mm at WD 30 mm
  • Electron Beam Energy: 200 eV to 30 keV / down to 50 eV with Beam Deceleration mode
  • Probe Current: 2 pA to 400 nA
  • FIB Resolution: <2.5 nm at 30 kV (at SEM-FIB coincidence point)
  • Magnification: minimum 150x at coincidence point and 10 kV
    (corresponding to 1 mm field of view), maximum 1,000,000x
  • Accelerating Voltage: 0.5 kV to 30 kV
  • Ion Gun: Ga Liquid Metal Ion Source
  • Probe Current: 1 pA to 50 nA
  • SEM-FIB Coincidence at:
    • WD 5 mm for SEM
    • WD 12 mm for FIB SEM
    • FIB angle: 55°
  • Gas Injection System: Tungsten and Platinum
  • Up to 8” wafer inspection in both SEM as well as in FIB operation enabled by the new triple lens design.
  • Maximum Specimen Height: 96 mm (with rotation stage); 137 mm (without rotation stage)
  • Integrated TOF-SIMS with a compact TOFSIMS detector and uses FIB column as primary ion beam with 3D compositional analysis.

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

JEOL JSM 6700F

 

System Overview

FESEM JSM-6700F is a high-resolution and easy-to-operate scanning  electron microscope, which employs a field-emission gun for the electron source and state-of-the-art computer technology for the image-display system. This system detects the secondary electrons to image the topography of the sample. The minimum feature is around 50nm.

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

 

NOVA NANOSEM 230

 

System Overview

  • NOVA NANOSEM 230 by FEI
  • Model Year: 2009 
  • High resolution field  emission Scanning Electron Microscope (SEM) with retractable low-kV high-contrast detector;  through lens detector; backscatter detector; SED; Auto stage; Chamber CCD; SE-cathode electron gun; multiple hole aperture.
  • Minimum features:
    • Around 50nm
    • Detector: SED, GBSD, BSD
    • Stage:X, Y, Z, R Axis motor drive
    • Beam landing energy: 50 V – 30 kV
    • Probe current: 0.6 pA – 100 nA
    • Tilt: Manual

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

WAFER DICER

 

System Overview

Dicing of full wafers up to 8″ and piece-parts. A dicing saw employs a high-speed spindle fitted with an extremely thin diamond blade to dice or groove semiconductor wafers and other work pieces. Saws feature versatile processing capabilities, compact designs, and high precision and reliability. Users perform work-piece loading, alignment, and unloading automatically.

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

 

PROBE STATION 3

System Overview

Provides for semiconductor device characterization and analysis at ambient environment.

Capabilities

Accommodate up to 4″ diameter samples. It has four adjustable needle probes for testing devices and circuits on wafers. Outboard electronics may include C-V measurement, current or voltage sources.

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

 

PROBE STATION 2

 

System Overivew

IV and CV measurement for electronic devices.

Features

  • The maximum Current: 100 mA.
  • The maximum Voltage: 40 V.
  • The smallest pad that can probe: 20 um X 20 um.

Availability: To be advised

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

 

PROBE STATION 1

 

System Overview

IV and CV measurement for electronic devices.

Features

  • The maximum Current: 100 mA.
  • The maximum Voltage: 40 V.
  • The smallest pad that can probe: 30 um X 30 um.

Availability: To be advised

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

SEMICONDUCTOR PARAMETER ANALYZER

 

System Overview

The Agilent Semiconductor parameter analyzer (SPA) conducts standard test routines for p-n junctions, CMOS, MOSFET, diodes and etc.

Availability: To be advised

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

 

 

VSM

System Overview

The EZ 9 VSM is dedicated for measurement of the magnetic moment of materials as a function of field, angle, temperature, time.

  • Sensitivity up 10e-06emu
  • Achievable maximum magnetic field from 2.6 T to 3.12 T with sample space from 16mm to 3.5mm
  • Working temperature ranges from 77K to 1000K
  • Sample Size
    – Available measurement types for sample size are: Virgin Curve, Hysteresis Loop, IRM and Virgin Curve, DC Demagnetization, Combination Measurements, Angular Remanence, AC Remanence, Time Dependence, Temperature Scan, Torque and Miyajima Method

Location: E6-05-08G, Characterization Room

Contact: e6nanofab@nus.edu.sg

SMOKE

System Overview

By application of the magneto optical Kerr effect, the rotation of the polarization plane of the reflected light is transformed into a contrast by means of an analyser when the domain magnetization direction change.

The E6NanoFab Evico Magneto-Optical Kerr Microscope & Magnetometer in is able to visualisation of magnetic domains and magnetization processes as well as for optically recording magnetization curves qualitatively on all kinds of magnetic materials, including bulk specimens like sheets or ribbons, magnetic films and multilayers, patterned films or micro- and nanowires.

The In-plane magnetic field range from 10-4 Tesla up to 1.3 Tesla, depends on pole piece configuration and choice of coils. And the observation area is 8 mm x 8 mm min and 30 mm x 30 mm max.

Location: E6-05-08A, Characterization Room

Contact: e6nanofab@nus.edu.sg

 

SQUID

 

System Overview

  • The MPMS3 SQUID magnetometer allows DC and VSM Data Acquisition
  • Options of horizontal rotator allows for sample measurement as a function of angle
  • Manual insertion utility probe with 5 leads for variety resistivity measurement
  • Oven and high vacuum for high temperature measurement
  • AC susceptibility for magnetization dynamics measurement
  • Ultra-low field for superconductivity transition temperature and spin glass transition temperature measurement

 

Location: E6-05-08F, Characterization Room

Contact: e6nanofab@nus.edu.sg

SPM

System Overview

The Bruker Dimension Icon AFM incorporates the latest evolution of Bruker’s industry-leading nanoscale imaging and characterization technologies on a large sample tip-scanning AFM platform. The Icon’s temperature-compensating position sensors render noise levels in the sub-angstroms range for the Z-axis, and angstroms in X-Y.

Technical Specifications

  • ScanAsyst® Imaging – ScanAsyst is a PeakForce Tapping based image optimization technique that enables every user to create the highest resolution AFM images using single-touch scanning.
  • Conventional Tapping Mode – for topology/roughness/step-height measurements
  • Magnetic Force Microscopy (MFM) –  can be used to image both naturally occurring and deliberately written domain structures in magnetic materials
  • Electric Force Microscopy (EFM) – is used for electrical failure analysis, detecting trapped charges, mapping electric polarization, and performing electrical read/write, among other applications.
  • Kelvin Probe Force Microscopy (KPFM) – is widely used for analysing the surface potential of the structures.
  • Conductive AFM (CAFM) – used to measure and map current of the sample in the 2pA to 1µA range while simultaneously collecting topographic information.

Location: E6-05-08A, Characterization Room

Contact: e6nanofab@nus.edu.sg

 

XRD

System Overview 

Multipurpose XRD

Technical Specifications

  • 3kW sealed tube
  • 0D, 1D detector
  • Horizontal Goniometer, independent and high resolution omega & 2theta (2θ) scan
  • Theta (θ) / 2θ accuracy and reproducibility: ≤0.02 on Si powder
  • Applications up to 4 inch: High-resolution XRD (HRXRD) or reciprocal space mapping (RSM) (1-D and O-D with analyzer);rocking curve; XRR, Grazing incidence; inplane grazing incidence, pole figure, SAXS, powder diffraction
  • Theta (θ) / 2θ up to 8 inch

 

Location: E6-05-08, Characterization Room

Contact: e6nanofab@nus.edu.sg

WIRE BONDER

 

System Overview

  • Deep access 90º wire or ribbon feed, and single point tab/lead bonding
  • Programmable dual force (high or low), pure vertical Z, pneumatic braking of all axes during bonding, and radiant tool heat

Technical Specifications

  • Z tool range: 0.5625 inch
  • Z encoder resolution: 0.001 inch
  • Bond force range: Adjustable, 10 to 250 grams
  • Transducer: ½ wave, 63 KHz (nominal)
  • Ultrasonics: Built-in, 8 bit, 4 watts (Ultrasonic Positioning Utility)
  • Wire range: 0.7 to 2.0 mils, 1×10 mil gold ribbon
  • ESD protection: Protection against Electrostatic Discharge
  • Display: 4 line, 40 character LCD
  • Deep access tool length: 0.750 inch

 

Location: E6-05-Dry Lab, Level 5

Contact: e6nanofab@nus.edu.sg

MOLECULAR BEAM EPITAXY (MBE) SYSTEM FOR THE GROWTH OF A RANGE OF GROUP  II-VI and IV MATERIALS

 

System Overview

The fully integrated MBE system allows deposition of hetero-structures and semiconductors. II-VI and IV group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.

Technical specifications:

  • Growth Chamber (Group II-VI)
  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (S, Se, Te, P)
  • Electron beam gun for evaporation of transition metal (Mo, Ta, W, Hf, Zr)
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2 inch wafer
  • Heating up to1000ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC

MBE Growth Chamber (Group IV)

  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
  • Electron beam gun for evaporation of carbon
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2inch wafer
  • Heating up to1000 ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC

Location: E6-06-01

Contact: e6nanofab@nus.edu.sg