WHAT SET US APART?
  • Nano-and-Micro mix and match integration.
  • Full flow technology prototyping comprising 100 to 200 steps supported by 30 to 40  tools.
  • The 8” wafer capability enables the prototypes to easily scale up to the production level.

Nano Fabrication and Process Capability

E6NanoFab enables the creation of nanoscale structures and devices with top-down and bottom-up approaches. The facility is equipped to provide maximum flexibility with capabilities to process a variety of materials such as CMOS compatible materials, magnetic materials, III-V & III-N materials, 2D materials and flexible materials.

Thin Film Deposition and Material Growth

PICOSUN ALD

  • Deposition of Metal Nitrides, Oxides and sulphides
  • Up to 8” wafers size
  • Deposition uniformity:
    > Thermal Al2O3 – 1.5%
    > Plasma enhanced Al2O3 – 1.5%
  • High aspect ratio depositions:
    > Thermal – up to 2000:1
    > Plasma enhanced – up to 50:1
  • Target: Al2O3, HfO, ZrO and TiN

Location
E6-05-09, Cleanroom

Contact
e6nanofab@nus.edu.sg

System Overview

  • Handle up to 8” wafers size
  • High density film deposition of Oxide, Nitride and amorphous Si
  • Stress controlled SiN process
  • 240mm diameter resistance heated aluminium electrode for temperatures up to 400°C, grounded
  • Electrical chamber wall heating up to 80°C minimizing chamber wall deposition

Target: SiN, SiO2, Si

 

Location
E6-05-09, Cleanroom

Contact
e6nanofab@nus.edu.sg

System overview

  • Close proximity physical vapour deposition using magnetrons technology
  • Target-to-substrate distance adjustable between 50-100mm.
  • Accepts 3” diameter target size
  • Accepts various sample sizes and max 8” wafer
  • DC and RF sputter capability
  • DC and RF substrate bias with rotation
  • Confocal sputtering available

Targets

Ti, Mo, W, SiO2, Pt, ZnO

Technical specification           

  • Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environment
  • PID temperature controller for substrate with +/- 1 degree C temp. stability
  • DC sputter power up to 1500W
  • RF sputter power up to 600W@ 13.56 mHz
  • Substrate RF bias 110W@ 13.56 mHz with rotation
  • Substrate carrier 3″ working distance adjustment (incident ion energy from 50eV to 300eV)
  • Process gases, Ar, N2, O2
  • Metallic, oxide and composite targets
  • Build in RHEED for film deposition monitor
  • Build in RGA for leak detection
  • Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%

Location
E6-01-01, Cleanroom

Contact: e6nanofab@nus.edu.sg

System overview

  • Able to handle up to 8” wafers size
  • For deposition metals, dielectrics, super-lattices, alloys
  • Substrate heating up to 800°C capable of being heated in an O2 environment
  • Crystal deposition controller for co-deposition

Targets

SiO2, Pt, Al, Au, Ti, TiN, Pd,Ag


Technical specifications       

  • Chamber size:  36″ high x 24″ ID
  • 10 kW High Voltage Power Supplies for e-beam sourceDual-beam covering 4 crucibles for co-deposition and multi-layer deposition
  • Thermal evaporation source with molybdenum resistive boats, 3kW Power Supply
  • Substrate rotation and 300W RF/DC biasing (incident ion energies of 50 to 300 eV)
  • PID temperature controller for substrate with +/- 1 degree C temprature stability
  • Build in RGA

Location
E6-01-01, Cleanroom

Contact
Email: e6nanofab@nus.edu.sg

Model: Edward Auto 306 Turbo   

Substrate size

Irregular to standard 8”dia wafer

Metals

Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.

The Application

The heating is carried out by passing a large current
through a filament container (tungsten boat or material coated tungsten rod), which has a finite electrical resistance.


Location:
E6-02-08

Contact: e6nanofab@nus.edu.sg

Model: Edward Auto 306 Turbo   

E-Beam Evaporation System for Metal Deposition

Substrate size

Irregular to standard 8”dia wafer.

Metals

Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.

Crucibles

Intermetallic-IML, Graphite liner-GL and ThickWall Graphite Liner-TWGL.

 

Availability: To be advised

Location: E6-02-08

Contact: e6nanofab@nus.edu.sg

Material Growth

System Overview

The fully integrated MBE system allows deposition of hetero-structures and semiconductors. IV and II-VI group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.

Technical specifications

  • Available Material for Group IV: Si, C, Ge, Sn.
  • Transition metal targets: Mo, W, Pt, Zr, Hf.
  • Chalcogen targets: S, Se, Te.
  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
  • Electron beam gun for evaporation of carbon
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2″ wafer,
  • Heating up to 1000 ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90 mm diameter; bakeable up to 200 ºC

Location: E6-06-01

Contact: e6nanofab@nus.edu.sg

Annealing Process

System Overview

High temperature annealing for various materials

Technical specifications

  • Wafer size: up to 8” wafer
  • Temperature up to 1050 degC
  • Ramp rate up to 300degC/sec
  • 6 individual controllable thermal zone by infrared lamp
  • Heat uniformity +/-2C for 8 inch wafer 1000C
  • Anneal in N2, O2
  • Annealing under vacuum environment (10e-6 torr)

Location
E6-01-01

Contact
e6nanofab@nus.edu.sg

Overview

As the density of semiconductor becomes higher and its pattern becomes finer, Rapid  Thermal Annealing (RTA) is attracting attention as an important heating technique in the semiconductor fabrication process. The class 10000 cleanroom will make available two (2) units of rapid thermal annealer to support the high density semiconductor fabrication processing.

Mini Lamp Annealer MILA-3000

The MILA-3000 has integrated excellent characteristics, such as capabilities of rapid heating/cooling of the infrared gold image furnace, high precision temperature control, clean heating and versatile atmosphere selection, in a compact unit and features moderate price, small size and high performance.

Max Size: Less than (20 x 20) mm.

Availability: To be advised.

Contact: e6nanofab@nus.edu.sg

Furnance system for wet and dry oxidation in the temperature range of 200 to 1200 °C will be available in 3rd quarter of 2020.

Location
E6-05-09, Cleanroom

Contact

Patrick TANG
Email: patrick@nus.edu.sg
Tel: 660 17029 / 6601 7041

System Overview

The Magnetic Annealing System is an 8.0 Tesla Magnetic Annealing System for pilot line and R&D usage.

Technical Specifications

• Magnetic field: 0 to 8.0 Tesla
• Wafer size: Ø2” (51 mm) circular diameter & 5 product wafers
• Wafer orientation: In plane or perpendicular to magnetic field direction
• Field homogeneity: -2/+2% over product wafers
• Field uniformity: Angle <+/-1.5° over product wafers
• Set-point accuracy: <5 mTesla
• Field stability: <0.1% of field value
• Field reproducibility: <5 mTesla
• Temperature range: 200 – 450°C
• Max wafer exit temp: 60°C
• Thermal uniformity: < ±3°C in sample volume
• Set point accuracy: ±1.5°C
• Cross wafer uniformity: ±2°C
• Cross stack uniformity: ±1.5°C

Location
E6-01-02, Class 100 Cleanroom

Contact
e6nanofab@nus.edu.sg
Tel: 660 17030

Magnetic Processing

System Overview

The  SCIA Coat 200 is designed for homogeneous coating of high precision optics such as X-ray mirrors and optical filters with the technology of Dual Ion Beam Deposition (DIBD). The system is also equipped with a RF350-e ion beam source for etching process.

Technical Specifications

  • Cylindrical ICP ion beam source RF350-e
  • Beam diameter of 350 mm at extraction grid
  • Inductively coupled plasma (ICP) based plasma excitation with RF generator at 4.00 MHz
  • ion energy: < 100 eV; Max. ion energy: > 1500 eV
  • Ion current density up to 1 mA/cm² with flat grid system
  • Wafer chuck for 200 mm wafers
  • Substrate rotation up to 20 rpm, Substrate holder tilt between 0° – 170° in 0.1° steps
  • A standard 4-port handling robot for fully automatic handling of wafers
  • Load-lock for loading of three 200 mm wafers
  • HAL IMP 301/3F Ion Milling End Point Detection System
  • With Secondary Ion Mass Spectroscopy (SIMS), an in-situ measurement of sputtered material from substrate can be done.
  • The system is controlled by Windows 7 with fully SEMI-standard compatible software suite.
  • Etch rate: > 8 nm/min, uniformity: ≤ 8 % 3σ, reproducibility (10 runs) ≤ 3 % 3σ.
  • Deposition rate (Ta) > 6 nm/min, uniformity: ≤ 3 % 3σ , reproducibility (10 runs) ≤ 2 % 3σ

Location
E6-01-02, Class 100 Cleanroom

Contact
e6nanofab@nus.edu.sg

Magest S200 is a batch-processing type sputtering system correspond to MRAM production.

Targets: Mg, Cu, W, Fe60Co20B20, Fe90Co10, Fe80B20, Co, Pt, Ru, Ta, Ti, MgO

 

System Overview

This system consists of Autoloader, Transfer Chamber, Pre-clean Chamber , RTP Chamber & Sputter chamber sections.

  • Autoloader: Dual-arm ROBOT, Alignment station, 2 Stage cassette Interface, metal wafer stocker for 200mm wafer (25 pcs. of wafers capacity)
  • Transfer Chamber: Wafer transfer robot Keytran-IV (KRC-4000Z) Dual arm
  • Pre-clean Chamber: 2 gas Lines (Ar 100sccm, Ar 5 sccm), LT-ICP Electrode and Ceramic Shield.
    • ESC hot plate stage and RF Power supply
  • RTP Chamber: (Ar 2SLM, N2 100sccm, O2 5sccm, Ar 100sccm), Quartz Pin stage, Gold Image Furnace (9zone Lamp)
  • Sputter Chambers: The system has four sputter chambers with wafer stage rotation. Each sputter chamber has a sputter down mechanism with a permanent magnet rotation magnetron cathode. The sputter chamber can form the continual membrane of maximum of 3 layer loads “triple gun cathode”.
    • Sputter Chamber-1 (DC/RF Sputter): (Ar 100 sccm, Ar 5 sccm),
    • Sputter Chamber-2 (DC Sputter): (Ar 100 sccm, Ar 5 sccm),
    • Sputter Chamber-3 (DC Co-Sputter): (Ar 100 sccm, N2 50 sccm, Ar 5 sccm, Kr 100 sccm), ESC hot plate stage
    • Sputter Chamber-4 (DC/RF Sputter): (Ar 100 sccm, N2 100sccm, Ar 5 sccm),
    • Control System: This system is fully automatically controlled by ULVAC’s CyberCELL, and this software has a flexible design consisting of fore transfer modes: series, parallel, series/parallel and random access. Operation is performed only on a Cluster Tool Controller (CTC) that has operator—friendly-human-interface design.

Location
E6-01-02, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

System Overview

The Magnetic Annealing System is an 8.0 Tesla Magnetic Annealing System for pilot line and R&D usage.

Technical Specifications

• Magnetic field: 0 to 8.0 Tesla
• Wafer size: Ø2” (51 mm) circular diameter & 5 product wafers
• Wafer orientation: In plane or perpendicular to magnetic field direction
• Field homogeneity: -2/+2% over product wafers
• Field uniformity: Angle <+/-1.5° over product wafers
• Set-point accuracy: <5 mTesla
• Field stability: <0.1% of field value
• Field reproducibility: <5 mTesla
• Temperature range: 200 – 450°C
• Max wafer exit temp: 60°C
• Thermal uniformity: < ±3°C in sample volume
• Set point accuracy: ±1.5°C
• Cross wafer uniformity: ±2°C
• Cross stack uniformity: ±1.5°C

Location: E6-01-02, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

Lithography

Lithography is a process where a pattern written or transferred to a substrate. It uses light, ions or electron energy into photo and electron sensitive resists. At E6NanoFab, Electron-Beam Lithography, Laser-Writer, and Mask-Aligner tools serve to pattern a variety of materials from sub-10 nanometers up to 100’s of microns over large sample areas.

System Overview

The EBL system is used to directly write fine features in resist with feature’s line widths smaller than 8 nm. The system has a custom stage with 10mm of Z-axis travel for writing over curved surfaces. The system can handle small samples through 200mm (8 inch) wafers and 7″ x 7″ mask plates.

 

Technical specifications:

  • 50 & 100kV beam energy
  • Electron beam current 50 pA – 200 nA
  • Thermal field emission source
  • 1.9 nm Gaussian beam size at 100 KV
  • Automated aperture change
  • 1mmx1mm deflection field size
  • 100 MHz pattern generator frequency
  • Stage has 210mm X-Y travel and 10mm Z travel
  • 1.5 Å accuracy on stage location
  • External alignment microscope
  • Proximity correction
  • Small pieces to 200mm (8 inch) wafers
  • 7″ x 7″ mask plates
  • Resolution: < 8nm line width @100 kV with 100 μm field size
  • Stitching Accuracy: <±10 nm @100 kV with 100 μm field size
  • Overlay accuracy: <±10 nm @100 kV with 100 μm field size

Location
E6-01-01 Cleanroom, Class 10

Contact: e6nanofab@nus.edu.sg

System Overview

DWL 66fs is a high resolution pattern generator for direct writing and mask making.

Available Resource

AZ 1512, AZ1518

Technical Specifications

  • Direct patterning for maximum substrate size: 9” x 9”
  • Minimum substrate size: 10 x 10 mm²
  • Maximum write area: 200 x 200 mm²
  • Substrate thickness: 0 to 6 mm
  • Illumination source: Diode Laser (405 nm) for standard positive resist exposure
  • Direct writing with minimum feature size of 0.6 μm
  • High accuracy overlay alignment of 400 nm
  • Vector Exposure Mode offers five different line widths
  • Complex topographies patterning capability for micro-optical
  • Components or any other gray scale application
  • Interferometer stage position resolution: 10 nm

Location
E6-01-03, Class 10 Cleanroom

Contact: e6nanofab@nus.edu.sg

System Overview

The mask aligner operates either in contact or in proximity mode and able to handle a wide range of substrate sizes from small pieces up to 200mm wafers.

Available Resource

  • UV and DUV, AZ1512 and AZ4110
  • Masks are not provided

Technical Specifications

  • Able to handle substrate size of 25 mm round up to 200 mm round and
    200 x 200 mm square
  • Capable to handle mask size ranging from 2”x2” up to 9”x9”
  • DC lamps HG 350 W/S, HG 500 W, HG-XE 500 W
  • X, Y, THETA- alignment stage for motorized operation, resolution 0.1um
  • Alignment gap programmable from 1 to 1,000 micron, resolution at 1 micron
  • MO optics for Highest Uniformity, Diffraction reduction, Focus depth increase
  • Substrate Conformal Imprinting Lithography (SCIL) / PDSM Imprinting Lithography
  • Imprint lithography up to 150mm
  • Wavelength: 350 to 1200 nm
  • TSA alignment accuracy: <0.5μm
  • BSA alignment accuracy:<1.0 um
  • Infra-red (IR) Alignment , BSA alignment accuracy ≤ 1µm
  • UV uniformity: +/-3.5% for 8” wafer
  • Patterning of structures resolution below 0.8 μm
  • Alignment accuracy down to 0.25 μm
  • (SCIL) / PDSM Imprinting Lithography resolution better than 100nm

Location
E6-01-03, Cleanroom, Class 100

Contact: e6nanofab@nus.edu.sg

System Overview

ModelKarl Suss MA6

Technical Specifications

  • UV400 Exposure Optics
  • Wavelength: 365nm and 405nm
  • Substrate Size: irregular to standard 2” dia wafer
  • Mask Size: Typical 3” square
  • Wafer Thickness: < 4 mm


Location

E6-02-07, Level 2 Cleanroom, Class 10000

Contact: e6nanofab@nus.edu.sg

System Overview

A procedure used to deposit uniform thin films to flat substrates. Small amount of coating material is applied on the center of the substrate, which is either spinning at low speed or not spinning at all. The substrate is then rotated at high speed in order to spread the coating material by centrifugal force.

Spin coater involves accurately dispensing a liquid onto a flat substrate and then spinning at high speed to achieve a uniform film.

Technical Specifications

  • Speeds of up to 6,000 RPM.
  • Irregular sizes 5-50 mm
  • Handle up to 8” wafers on a vacuum chuck.

Location
E6-01-03, Class 100 Cleanroom

Contact
e6nanofab@nus.edu.sg

System Overview

Hot plates are hotplates for soft bake and post exposure bake (PEB) used for baking photoresist which improves adhesion and dry etch resistance. Soft bake to drive off solvents and to solidify the photoresist film.

Technical Specifications

  • Up to 200mm substrates
  • Fast heating
  • Temperature up to 250 degree C
  • Small foot print
  • Easy to operate.

Location
E6-01-03, Class 10 Cleanroom

Contact
Email: e6nanofab@nus.edu.sg

Location: E6-02-07

Contact: e6nanofab@nus.edu.sg

System Overview

The Solvent bench is designed for substrate cleaning, developing pattern after exposure, lift–off pattern transfer schemes and other fabrication operations using solvents.

Technical specifications

  • Stainless steel perforated work space
  • Stainless steel solvent sinks
  • DI Water and N2 Teflon gun
  • Differential pressure gauge to measure the difference in pressure between the bench exhaust and the room

Location
E6-01-03, Class 10 Cleanroom

Contact
e6nanofab@nus.edu.sg

Solvent Wet Bench

Di Water

Spin Coater

Etching

Etching is a process for pattern transfer and surface treatment in micro-nano device fabrication. E6NanoFab makes available dry and wet etching systems to support the diverse process requirement.

Dry Etching

Multi-chamber cluster tools such as ICP plasma etching and ion beam milling provide strong dry etching capabilities for various materials such as Si, III-V & III-N, oxides, metals, polymers and others.

Wet Etching

Our dedicated wet-benches support several wet processes such as RCA, standard cleaning, and orientation dependent Si KOH etching.

System Overview

The Integrated ICP Etch Cluster comprises Metal etch module, Dielectric etch module and III-V etch module. It is capable to handle 8” wafer with up to 8 mass flow controlled gas lines for each module.

1. The Metal Etch Module

  • Metal etch module (W, Al, AlN tested)
  • InP grating etch
  • Cryo-cooled/electrically heated etch lower electrode, working temperature: -150 ºC – +400 ºC
  • Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
  • Bypassed gas line and MFC for toxic gas (Cl2, BCl3, HBr)
  • External gaspod gas line heating kit for low vapour pressure gases (BCl3)

2. Dielectric Module

  • Standard gas line and MFC for nontoxic gases (SF6, Ar, O2, N2, C4F8, CHF3)
  • Bypassed gas line and MFC for toxic gas (Cl2)

3. III-V Etch Module

  • Cryo-cooled/electrically heated etch lower electrode, working temperature:   -150ºC-+400 ºC
  • Rapid cooling from cryo to chiller mode, from 200°C to 20°C in 40 minutes
  • Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
  • Bypassed gas line and MFC for toxic gas (Cl2, BCl3, H2, CH4)
  • External gaspod gas line heating kit for low vapour pressure gases (BCl3)

Location
E6-05-09, Cleanroom

Contact
e6nanofab@nus.edu.sg

System Overview

Xenon Difluoride etcher is a kind of vapor etcher where reactive gas spontaneously reacts with a material in vapor phase.

This XeF2 can etch Si and Ge isotropically and offers excellent selectivity to various materials such as Al, SiO2, Si3N4 and photoresist.

Location
E6-05-09, Level 5 Cleanroom

Contact: e6nanofab@nus.edu.sg

System Overview

Plasma Asher uses oxygen plasma to remove photoresist from wafers.

Technical specifications

  • Capable to handle 200 mm wafers
  • Gas Flows: O2= 1000 – 2000 sccm. N2 – 100 –500 sccm
  • μ-wave Power: 2.45GHz, 1000 watt, continuously adjustable
  • Base pressure: ≤0.5 mtorr
  • Operating pressure: 0.5- 5 mtorr
  • IR temperature measurement outside chamber
  • Optical Endpoint Detector (based on plasma intensity signal)
  • Platen Temperature: 100° – 300° C
  • Uniformity within wafer: 2% – 5%
  • Wafer to Wafer: 2% – 4%
  • Ash Rate: min < 200Å – max ≥ 3 μm./min.

Location
E6-05-09, Level 5 Cleanroom

Contact: e6nanofab@nus.edu.sg

System Overview

    • Metal and dielectric planarization(Cu Al, SiO2, SiN..)
    • Within wafer non-uniformity 5%
    • Run to run non-uniformity 5%
    • Finishing surface roughness 1nm

Location
E6-01-02, Class 100 Cleanroom

Contact
e6nanofab@nus.edu.sg