Facility – Dry Lab

List of Tools in the respective location

THERMAL EVAPORTOR

Edward Evaporation System for Metal Deposition

Model: Edward Auto 306 Turbo

Substrate size:
Irregular to standard 8”dia wafer

Metals:
Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.

The Application:

The heating is carried out by passing a large current
through a filament container (tungsten boat or material
coated tungsten rod), which has a finite electrical resistance.

Location: E6-02-08, Dry Lab.

Contact: e6nanofab@nus.edu.sg

E-BEAM EVAPORTOR

E-Beam Evaporation System for Metal Deposition

Model: Edward Auto 306 Turbo

Substrate size: Irregular to standard 8”dia wafer.
Metals: Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.

Crucibles: Intermetallic-IML, Graphite liner-GL and ThickWall Graphite Liner-TWGL.

Location: E6-02-08, Dry Lab.

Contact: e6nanofab@nus.edu.sg

FIB-SEM

System Overview

Process viewing Cut & See
Failure analysis

Technical Specifications

Up to 8” wafer inspection in both SESM as in FIB operation enable by the new triple lens design
Max Specimen Height: 96 mm (with rotation stage); 137 mm (without rotation stage)
Integrated TOF-SIMS with a compact TOFSIMS dector and uses FIB column as primary ion beam with 3D compositional analysis
Magnification at 30kV: 4x-1,000,000x
Maximum Field of View: 4.3 mm at WD; analytical 5 mm; 7.5 mm at WD 30mm
Electron Beam Energy: 200 eV to 30 keV down to 50eV with Beam Deceleration mode
FIB Resolution : <2.5nm at 30kV (at SEM-FIB coincidence point)
Accelerating voltage: 0.5 kV to 30 kV
Ion Gun : Ga Liquid Metal Ion Source
Probe Current: 1 pA to 50 nA
FIB angle: 55 degree
Gas injection system : Tungsten and Platinum
Model: TESCAN GAIA3

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

Quality of Patterned Resist

FE-SEM (Ultra High Resolution)

System Overview

Multi-signal detection and imaging system, for elemental composition, crystal and surface information.

Technical Specifications

Accelerating Voltage: 0.5 – 30kV
Resolution: 0.7nm at 15kV (SE) 0.9nm at 1kV w/ deceleration (SE)
Magnification Range: 20X – 2,000 X (Low Mag) 100X – 2,000,000X (High Mag)
Detectors: Lower/ Upper/ Top, YAG BSE, STEM (Bright-Field/ PD-Dark Field) and EDX.
Stage Traverse: (5-axis Motorized) X: 0 – 110mm Y: 0 – 11mm Z: 1.5 – 40mm R: 360° T: -5° – +70°
Observable Range: 150mm dia. (MAX Sample Size)
Specimen Exchange Chamber size: 6 inch dia.
Mountable specimen thickness: 27mm (Diameter ≦ 33mm)
Model: Hitachi Regulus 8230

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

High Resolution Imaging

JEOL JSM 6700F

System Overview

FESEM JSM-6700F is a high-resolution and easy-to-operate scanning electron microscope, which employs a field-emission gun for the electron source and state-of-the-art computer technology for the image-display system. This system detects the secondary electrons to image the topography of the sample. The minimum feature is around 50nm.

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

NOVA NANOSEM 230

System Overview

A wide range of materials can be imaged which includes semiconductor devices, thin films and even non-conductive specimens.

Brand: FEI NOVA NANOSEM 230
Minimum feature : ~ 50nm
Detector: SED, GBSD, BSD
Stage: X, Y, Z, R Axis motor drive
Beam landing energy: 50 V – 30 kV
Probe current: 0.6 pA – 100 nA
Tilt: Manual

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

Amorphous Si Image

RAMAN AND MICRO PL SYSTEM

System Overview

The Raman microscope acquire detailed chemical images and highly specific Raman data from discrete points. It analyses both large volumes and traces of material.

Dual laser system: 532nm & 325nm.
Able to measure both Raman and Photoluminescence.
Map rough, uneven, and curved surfaces
Transmission mapping – analyse large volumes of material and produce depth-averaged 2D images of material homogeneity.
Volume scans – 3D views of your transparent sample’s internal structure and see both the chemistry and the topography.
Renishaw inVia Raman

Location: E6-03-02

Contact: e6nanofab@nus.edu.sg

WAFER DICER

System Overview

Dicing of full wafers up to 8″ and piece-parts. A dicing saw employs a high-speed spindle fitted with an extremely thin diamond blade to dice or groove semiconductor wafers and other work pieces. Saws feature versatile processing capabilities, compact designs, and high precision and reliability. Users perform work-piece loading, alignment, and unloading automatically.

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

Characterisation

VSM

System Overview

The EZ 9 VSM is dedicated for measurement of the magnetic moment of materials as a function of field, angle, temperature, time.

Sensitivity up 10e-06emu
Achievable maximum magnetic field from 2.6 T to 3.12 T with sample space from 16mm to 3.5mm
Working temperature ranges from 77K to 1000K
Sample Size
– Available measurement types for sample size are: Virgin Curve, Hysteresis Loop, IRM and Virgin Curve, DC Demagnetization, Combination Measurements, Angular Remanence, AC Remanence, Time Dependence, Temperature Scan, Torque and Miyajima Method

Location: E6-05-08G, Characterization Room

Contact: e6nanofab@nus.edu.sg

SMOKE

System Overview

By application of the magneto optical Kerr effect, the rotation of the polarization plane of the reflected light is transformed into a contrast by means of an analyser when the domain magnetization direction change.

The E6NanoFab Evico Magneto-Optical Kerr Microscope & Magnetometer in is able to visualisation of magnetic domains and magnetization processes as well as for optically recording magnetization curves qualitatively on all kinds of magnetic materials, including bulk specimens like sheets or ribbons, magnetic films and multilayers, patterned films or micro- and nanowires.

The In-plane magnetic field range from 10-4 Tesla up to 1.3 Tesla, depends on pole piece configuration and choice of coils. And the observation area is 8 mm x 8 mm min and 30 mm x 30 mm max.

Location: E6-05-08A, Characterization Room

Contact: e6nanofab@nus.edu.sg

SQUID

System Overview

The MPMS3 SQUID magnetometer allows DC and VSM Data Acquisition
Options of horizontal rotator allows for sample measurement as a function of angle
Manual insertion utility probe with 5 leads for variety resistivity measurement
Oven and high vacuum for high temperature measurement
AC susceptibility for magnetization dynamics measurement
Ultra-low field for superconductivity transition temperature and spin glass transition temperature measurement

Location: E6-05-08F, Characterization Room

Contact: e6nanofab@nus.edu.sg

SPM

System Overview

The Bruker Dimension Icon AFM incorporates the latest evolution of Bruker’s industry-leading nanoscale imaging and characterization technologies on a large sample tip-scanning AFM platform. The Icon’s temperature-compensating position sensors render noise levels in the sub-angstroms range for the Z-axis, and angstroms in X-Y.

Technical Specifications

ScanAsyst® Imaging – ScanAsyst is a PeakForce Tapping based image optimization technique that enables every user to create the highest resolution AFM images using single-touch scanning.
Conventional Tapping Mode – for topology/roughness/step-height measurements
Magnetic Force Microscopy (MFM) – can be used to image both naturally occurring and deliberately written domain structures in magnetic materials
Electric Force Microscopy (EFM) – is used for electrical failure analysis, detecting trapped charges, mapping electric polarization, and performing electrical read/write, among other applications.
Kelvin Probe Force Microscopy (KPFM) – is widely used for analysing the surface potential of the structures.
Conductive AFM (CAFM) – used to measure and map current of the sample in the 2pA to 1µA range while simultaneously collecting topographic information.

Location: E6-05-08A, Characterization Room

Contact: e6nanofab@nus.edu.sg

XRD

System Overview

Multipurpose XRD

Technical Specifications

3kW sealed tube
0D, 1D detector
Horizontal Goniometer, independent and high resolution omega & 2theta (2θ) scan
Theta (θ) / 2θ accuracy and reproducibility: ≤0.02 on Si powder
Applications up to 4 inch: High-resolution XRD (HRXRD) or reciprocal space mapping (RSM) (1-D and O-D with analyzer);rocking curve; XRR, Grazing incidence; inplane grazing incidence, pole figure, SAXS, powder diffraction
Theta (θ) / 2θ up to 8 inch

Location: E6-05-08, Characterization Room

Contact: e6nanofab@nus.edu.sg

Packaging

WIRE BONDER

System Overview

Deep access 90º wire or ribbon feed, and single point tab/lead bonding
Programmable dual force (high or low), pure vertical Z, pneumatic braking of all axes during bonding, and radiant tool heat

Technical Specifications

Z tool range: 0.5625 inch
Z encoder resolution: 0.001 inch
Bond force range: Adjustable, 10 to 250 grams
Transducer: ½ wave, 63 KHz (nominal)
Ultrasonics: Built-in, 8 bit, 4 watts (Ultrasonic Positioning Utility)
Wire range: 0.7 to 2.0 mils, 1×10 mil gold ribbon
ESD protection: Protection against Electrostatic Discharge
Display: 4 line, 40 character LCD
Deep access tool length: 0.750 inch

Location: E6-05-Dry Lab, Level 5

Contact: e6nanofab@nus.edu.sg

MBE

MOLECULAR BEAM EPITAXY (MBE) SYSTEM FOR THE GROWTH OF A RANGE OF GROUP II-VI and IV MATERIALS

System Overview

The fully integrated MBE system allows deposition of hetero-structures and semiconductors. II-VI and IV group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.

Technical specifications:

Growth Chamber (Group II-VI)
Base pressure: better than 5 x 10-10 Torr
Effusion Cell for Chalcogen material up to 1300ºC (S, Se, Te, P)
Electron beam gun for evaporation of transition metal (Mo, Ta, W, Hf, Zr)
Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
Substrate up to handle 2 inch wafer
Heating up to1000ºC with heating rate up to 20 ºC per minute
Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC

MBE Growth Chamber (Group IV)

Base pressure: better than 5 x 10-10 Torr
Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
Electron beam gun for evaporation of carbon
Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
Substrate up to handle 2inch wafer
Heating up to1000 ºC with heating rate up to 20 ºC per minute
Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC

Location: E6-06-01

Contact: e6nanofab@nus.edu.sg

Others

LASER MICRO-MACHINING SERVICE

Overview

Custom Laser micro-machine system operating on a femtosecond pulsed laser. The short pulse length limits local heating effects reducing Heat Affected Zone (HAZ). Applicable in wide range of materials. Especially effective for ceramics, metals and selected Polymers.

• Ceramics* : Alumina oxide, Aluminium nitride , etc
• Wafers* : Silicon, Silicon Nitride, Silica (Glass), etc
• Polymers : Polyamide, Kapton, PMMA etc.
• Metals* : Stainless Steel, Copper, Aluminium etc.

We routinely perform and achieve the following precision:
1. 15 micron Percussion holes on ceramics, thin metals and silicon wafers with precision of <1 micron for ceramics.
2. 30 micron minimum Circular holes on ceramics, thin metals and silicon wafers with highest precision of <1micron for ceramics.
3. Smallest feature size > 20 microns with precision 1 micron on metal sheets, ceramics and polymers.
4. Dicing of Silicon wafer up to 750um thick with negligible dust on surface.

Remarks: Subjected to maximum material thickness between 500um ~ 700um*

Ceramic Material

Electrodes for ion trapping: We provide blade electrodes for 3D ion traps based on ceramic materials. These are used for quantum information processing and atomic clock projects.

Sample: 50um slot milling on 250um thickness Alumina oxide.