List of Tools in the respective location

L2 Wet Lab and Dry Lab

E-Beam Evaporator

 

E-Beam Evaporation System for Metal Deposition

Model: Edward Auto 306 Turbo 

Substrate size: Irregular to standard 8”dia wafer.
Metals:  Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.

Crucibles: Intermetallic-IML, Graphite liner-GL and ThickWall Graphite Liner-TWGL.

Availability: 3rd quarter of 2019.

Location: E6-02-09, Wet Lab.

Contact: e6nanofab@nus.edu.sg

THERMAL EVAPORTOR I

Edward Evaporation System for Metal Deposition

Model: Edward Auto 306 Turbo     

Substrate size:
Irregular to standard 8”dia wafer

Metals:
Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.


The Application:

The heating is carried out by passing a large current
through a filament container (tungsten boat or material
coated tungsten rod), which has a finite electrical resistance.

Location: E6-02-08, Dry Lab.

Contact: e6nanofab@nus.edu.sg

THERMAL EVAPORATOR II

System Overview 

The JEOL JEE-420T is used for thin film coating and is a simple tool to operate.

It is primarily used for preparation of various samples that are suitable for observation using SEM

(Scanning Electron Microscopes) and TEM (Transmission Electron Microscopes).

However, it can also be used for various other applications,  not limited to preparing bond pads for wire bonding.

Location: E6-02-08, Dry Lab

Contact: e6nanofab@nus.edu.sg

L5 Dry Lab

WIRE BONDER

 

System Overview

  • Deep access 90º wire or ribbon feed, and single point tab/lead bonding
  • Programmable dual force (high or low), pure vertical Z, pneumatic braking of all axes during bonding, and radiant tool heat

Technical Specifications

  • Z tool range: 0.5625 inch
  • Z encoder resolution: 0.001 inch
  • Bond force range: Adjustable, 10 to 250 grams
  • Transducer: ½ wave, 63 KHz (nominal)
  • Ultrasonics: Built-in, 8 bit, 4 watts (Ultrasonic Positioning Utility)
  • Wire range: 0.7 to 2.0 mils, 1×10 mil gold ribbon
  • ESD protection: Protection against Electrostatic Discharge
  • Display: 4 line, 40 character LCD
  • Deep access tool length: 0.750 inch

Location: E6-05-Dry Lab, Level 5

Contact: e6nanofab@nus.edu.sg

 

L6 MBE Room

MOLECULAR BEAM EPITAXY (MBE) SYSTEM FOR THE GROWTH OF A RANGE OF GROUP III-V/II-IV MATERIALS

 

System Overview

The fully integrated MBE system allows deposition of hetero-structures and semiconductors. A II-IV and a IV group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.

Technical specifications

  • Growth Chamber (Group II-IV)
  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (S, Se, Te, P)
  • Electron beam gun for evaporation of transition metal (Mo, Ta, W, Hf, Zr)
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2inch wafer,
  • Heating up to1000ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC

MBE Growth Chamber

  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
  • Electron beam gun for evaporation of carbon
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2inch wafer,
  • Heating up to1000 ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC

Location: E6-06-01

Contact: e6nanofab@nus.edu.sg