Characterization and Metrology
A large of group of measurement and characterization tools are available to provide magnetic characterization, electrical measurement, material characterization and process control parameters measurement throughout the fabrication process flow.
Magnetic Characterization
System Overview
The EZ 9 VSM is dedicated for measurement of the magnetic moment of materials as a function of field, angle, temperature, time.
- Sensitivity up 10e-06emu.
- Achievable maximum magnetic field from 2.6 T to 3.12 T with sample space from 16mm to 3.5mm.
- Working temperature ranges from 77K to 1000K
- Sample Size
– Available measurement types for sample size are: Virgin Curve, Hysteresis Loop, IRM and Virgin Curve, DC Demagnetization, Combination Measurements, Angular Remanence, AC Remanence, Time Dependence, Temperature Scan, Torque and Miyajima Method.
Location
E6-05-08G, Characterization Room
Contact
Email: e6nanofab@nus.edu.sg
System Overview
By application of the magneto optical Kerr effect, the rotation of the polarization plane of the reflected light is transformed into a contrast by means of an analyser when the domain magnetization direction change.
The Evico Magneto-Optical Kerr Microscope & Magnetometer is able to visualize the magnetic domains and magnetization processes; as well as for optically recording magnetization curves qualitatively on all kinds of magnetic materials including bulk specimens like sheets or ribbons, magnetic films and multilayers, patterned films or micro- and nanowires.
The In-plane magnetic field range from 10-4 Tesla up to 1.3 Tesla, depends on pole piece configuration and choice of coils. And the observation area is 8 mm x 8 mm min and 30 mm x 30 mm max.
Location
E6-05-08A, Characterization Room
Contact: e6nanofab@nus.edu.sg
System Overview
- The MPMS3 SQUID magnetometer allows DC and VSM data acquisition
- Options of horizontal rotator allows for sample measurement as a function of angle
- Manual insertion utility probe with 5 leads for variety resistivity measurement
- Oven and high vacuum for high temperature measurement
- AC susceptibility for magnetization dynamics measurement
- Ultra-low field for superconductivity transition temperature and spin glass transition temperature measurement
Location
E6-05-08F, Characterization Room
Contact: e6nanofab@nus.edu.sg
Material Characterization and Process Control
System Overview
An ellipsometer can be used to characterize many material properties, such as thickness, crystallinity, doping concentration, band gap, and refractive index. It measures the change in polarization of an incident light beam that interacts with and reflects off the sample and compares it to a model.
Technical Specification
- High-resolution UV-VIS (230 nm – 900 nm) scanning spectrometer with FWHM bandwidth less than 0.5 nm.
- High-resolution NIR extension up to 2500 nm: InGaAs detector directly adapted on the UV-Visible spectrometer, nominal wavelength range of 900 nm to 2500 nm, FWHM bandwidth less than 3 nm.
- Automatic incidence angle range control: 12.5 to 90 degrees.
- Independent adjustment of analyzer and polariser arms.
- Microspot optics (theoretical spot dimensions: 365 µm × 470 µm at 75° on sample).
- Ultra microspot option: additional slit allowing smaller spot size down to 60 µm at optical arm output (spot size on sample: 60 µm × 120 µm at 60°).
- Automated sample stage enabling X-Y cartography of the sample. Includes special software for sample stage control, data collection, and graphic display.
- Motorized Z allowing automatic focusing on the sample.
- Accommodates samples up to 200 mm in diameter.
Location
E6-05-09, Cleanroom
Contact: e6nanofab@nus.edu.sg
System Overview
The Park NX20 AFM features the world’s only True Non-Contact™ mode, allowing users to take both repeated measurements without damaging sample surface while preserving tip sharpness. Reputed as the world’s most accurate large sample AFM, The Park NX20 is a leading nano metrology tool for failure analysis and large sample research.
Technical Specifications
- Large sample measurement of up to 300 mm.
- Park SmartScan™ – powerful operating software automates processes which drastically improve efficiency and guides user through every step of the imaging process.
Incorporated Scanning Modes
- True Non-Contact™ mode
- Dynamic contact mode
- Contact mode
- Magnetic Force Microscopy (MFM)
- Phase Imaging
- Lateral Force Microscopy (LFM)
- Force-Distance (F/D) Spectroscopy
- Force volume Imaging
- Electricstatic Force Microscopy (EFM)
- Piezoresponse Force Microscopy (PFM)
- Scanning Kelvin Probe Microscopy (SKPM)
- Force Modulation Microscopy (FMM)
- Nanoindentation
- Nanolithography
- Variable Enhanced Conductive AFM (VECA)
- Scanning Capacitance Microscopy (SCM)
- Other Modes: AFM, MFM, CAFM, SCM
Location
E6-1-02, Class 100 Cleanroom
Contact: e6nanofab@nus.edu.sg
System Overview
- 4Å repeatability delivers industry-leading accuracy
- Single-arch design provides breakthrough scan stability
- 40% faster data collection times than prior generations
- 64-bit, parallel processing Vision64 software architecture delivers up to 10 times faster data analyses
- Intuitive Vision64™ user interface workflow simplifies operation
- Self-aligning styli enables effortless tip exchange
- Single sensor design offers low force and extended range in a single platform
Location
E6-05-09, Cleanroom
Contact: e6nanofab@nus.edu.sg
System Overview
The Nikon Eclipse L200 series performs exceptionally precise optical inspection of wafers, photo masks, reticles and other substrates.
Main Body
Built-in Episcopic Illumination; built-in power sources for motorized control; light intensity control; aperture diaphragm control.
Focusing Mechanism
- Cross travel: 29mm
- Coarse: 12.7mm per rotation (torque adjustable, refocusing mechanism)
- Fine: 0.1mm per rotation (in 1µm increments)
- 12V/100W halogen lamp light source built-in; otorized aperture diaphragm
- fixed field diaphragm (with focus target)
- L2TT Ultrawide tilting trinocular eyepiece tube (tilt angle 0-30°);F.O.V: 25mm
- 2-way optical path changeover
- 8 x 8 Stage; stroke: 205 x 205mm
- Coarse/fine movement changeover possible
- Fixed-position X-Y fine-movement controls
- CFI eyepiece lens series
- CFI60 LU/L Plan series
E6-01-01, Cleanroom
Contact: e6nanofab@nus.edu.sg
System Overview
The compact Samco UV-1 Ozone Cleaner utilizes a unique combination of ultraviolet light, ozone and controlled heating to etch organic materials.
Technical Specifications
- Substrate Size – upto 150mm (6 inch)
- Maximum Sample Thickness – 5mm (17mm, between stage and UV lamp)
- UV light Source – Hot cathode, low-pressure mercury vaper lamp (primary wavelengths:254 nm and 185 nm)
- Ozone generator – Silent discharge type; at least 5g/m3 at 0.5 liter/min oxygen flow rate
- UV-lamp and Ozone generator switches – can be switched ON or OFF during the process
- Substrate heater – Ambient to 300°C
- Digital Timer – 0 to 99 min:59 sec
- Ozone killer – Common metal honeycomb type ozone scrubber removes residual ozone in the process gas exhaust stream. Concentration of ozone at the exhaust is less than 0.1PPM
- Dimensions – 450mm(W)x400mm(D)x411mm(H)
Applications
- Removing organic contamination
- Pre-cleaning wafers prior to deposition
- Descumming photoresist and polyimide
- Cleaning prior to wafer bonding
- Surface modification for better adhesion
- UV curing
- Growth of thin stable oxide films (GE, GaAs, Si)
Location
E6-01-09, Cleanroom, Class 100
Availability
First Quarter, 2019
Contact: e6nanofab@nus.edu.sg
Metrology
System Overview
- Process viewing Cut & See
- Failure analysis
Technical Specifications
- Up to 8” wafer inspection in both SESM as in FIB operation enable by the new triple lens design
- Max Specimen Height: 96 mm (with rotation stage); 137 mm (without rotation stage)
- Integrated TOF-SIMS with a compact TOFSIMS dector and uses FIB column as primary ion beam with 3D compositional analysis
- Magnification at 30kV: 4x-1,000,000x
- Maximum Field of View: 4.3 mm at WD; analytical 5 mm; 7.5 mm at WD 30mm
- Electron Beam Energy: 200 eV to 30 keV down to 50eV with Beam Deceleration mode
- FIB Resolution : <2.5nm at 30kV (at SEM-FIB coincidence point)
- Accelerating voltage: 0.5 kV to 30 kV
- Ion Gun : Ga Liquid Metal Ion Source
- Probe Current: 1 pA to 50 nA
- FIB angle: 55 degree
- Gas injection system : Tungsten and Platinum
Location: E6-03-02, Metrology
Contact: e6nanofab@nus.edu.sg
Quality of Patterned Resists
System Overview
Multi-signal detection and imaging system, for elemental composition, crystal and surface information.
Technical Specifications
- Accelerating Voltage: 0.5 – 30kV
- Resolution: 0.7nm at 15kV (SE) 0.9nm at 1kV w/ deceleration (SE)
- Magnification Range: 20X – 2,000 X (Low Mag) 100X – 2,000,000X (High Mag)
- Detectors: Lower/ Upper/ Top, YAG BSE, STEM (Bright-Field/ PD-Dark Field) and EDX.
- Stage Traverse: (5-axis Motorized) X: 0 – 110mm Y: 0 – 11mm Z: 1.5 – 40mm R: 360° T: -5° – +70°
- Observable Range: 150mm dia. (MAX Sample Size)
- Specimen Exchange Chamber size: 6 inch dia.
- Mountable specimen thickness: 27mm (Diameter ≦ 33mm)
- Model: Hitachi Regulus 8230
Location: E6-03-02, Metrology
Contact: e6nanofab@nus.edu.sg
High Resolution Imaging
System Overview
FESEM JSM-6700F is a high-resolution and easy-to-operate scanning electron microscope, which employs a field-emission gun for the electron source and state-of-the-art computer technology for the image-display system. This system detects the secondary electrons to image the topography of the sample. The minimum feature is around 50nm.
Location
E6-03-02, Metrology
Contact: e6nanofab@nus.edu.sg
System Overview
A wide range of materials can be imaged which includes semiconductor devices, thin films and even non-conductive specimens.
- Brand: FEI NOVA NANOSEM 230
- Minimum feature : ~ 50nm
- Detector: SED, GBSD, BSD
- Stage: X, Y, Z, R Axis motor drive
- Beam landing energy: 50 V – 30 kV
- Probe current: 0.6 pA – 100 nA
- Tilt: Manual
E6-03-02, Metrology
Contact
e6nanofab@nus.edu.sg
Amorphous Si Image
System Overview
The Raman microscope acquire detailed chemical images and highly specific Raman data from discrete points. It analyses both large volumes and traces of material.
- Dual laser system: 532nm & 325nm.
- Able to measure both Raman and Photoluminescence.
- Map rough, uneven, and curved surfaces.
- Transmission mapping – analyse large volumes of material and produce depth-averaged 2D images of material homogeneity.
- Volume scans – 3D views of your transparent sample’s internal structure and see both the chemistry and the topography.
- Renishaw inVia Raman
Location: E6-03-02
Contact: e6nanofab@nus.edu.sg
System Overview
The Bruker Dimension Icon AFM incorporates the latest evolution of Bruker’s industry-leading sample tip-scanning AFM platform. The Icon’s temperature-compensating position sensors render noise levels in the sub-angstroms range for the Z-axis and angstroms in X-Y.
Technical Specifications
- ScanAsyst® Imaging – ScanAsyst is a PeakForce Tapping based image optimization technique that enables every user to create the highest resolution AFM images using single-touch scanning.
- Conventional Tapping Mode – for topology/roughness/step-height measurements
- Magnetic Force Microscopy (MFM) – can be used to image both naturally occurring and deliberately written domain structures in magnetic materials
- Electric Force Microscopy (EFM) – is used for electrical failure analysis, detecting trapped charges, mapping electric polarization, and performing electrical read/write, among other applications.
- Kelvin Probe Force Microscopy (KPFM) – is widely used for analysing the surface potential of the structures.
- Conductive AFM (CAFM) – used to measure and map current of the sample in the 2pA to 1µA range while simultaneously collecting topographic information.
Location
E6-5-08A
Contact
e6nanofab@nus.edu.sg
System Overview
Multipurpose XRD
Technical Specifications
- 3kW sealed tube
- 0D, 1D detector
- Horizontal Goniometer, independent and high resolution omega & 2theta (2θ) scan
- Theta (θ) / 2θ accuracy and reproducibility: ≤0.02 on Si powder
- Applications up to 4 inch: High-resolution XRD (HRXRD) or reciprocal space mapping (RSM) (1-D and O-D with analyzer);rocking curve; XRR, Grazing incidence; inplane grazing incidence, pole figure, SAXS, powder diffraction
- Theta (θ) / 2θ up to 8 inch
Location
E6-05-08, Characterization Room
Contact
e6nanofab@nus.edu.sg