Electrical Test

E6NanoFab is equipped with current and capacitance measurement tools to meet the needs of most wafer testing applications

System Overview

Enables fast, accurate and reliable resistivity testing.

Existing Probe Head

  • C4S-54/5S
    PROBE,4PT,.050,40-70,.005R,OS ( Osmium)

Optional Probe Head ( will provide when necessary)

  • C4S-54/5S
    PROBE,4PT,.050,40-70,.005R,WC (Tungsten carbide)

 

Material to be measured Tip material Tip radii Spring measure
Silicon slices Silicon ingots Tungsten carbide 50 µm 2 mils 70 to 180 gms per tip
Semiconductor sheet resistance Tungsten carbide or osmium 50 and 125 µm 2&5 mils 40 to 70 gms  per tip
Thin metallic films Osmium 125 & 50 µm  5&10 mils 40 to 70 gms  per tip
Gallium arsenide Gallium phosphide Arsenide Tungsten carbide 17.5 µm          0.7 mils 70 to 180 gms per tip

 

 

Location: E6-01-02, Cleanroom

Contact: e6nanofab@nus.edu.sg

Provides for semiconductor device characterization and analysis at ambient environment.

Capabilities

Accommodate up to 4″ diameter samples. It has four adjustable needle probes for testing devices and circuits on wafers. Outboard electronics may include C-V measurement, current or voltage sources.

Location: E6-03-02, Metrology

Contact: e6nanofab@nus.edu.sg

The Agilent Semiconductor parameter analyzer (SPA) conducts standard test routines for p-n junctions, CMOS, MOSFET, diodes and etc.

Location: E6-03-02, Metrology

Availability: To be advised

Contact: e6nanofab@nus.edu.sg

IV and CV measurement for electronic devices.

Features

  • The maximum Current: 100 mA.
  • The maximum Voltage: 40 V.
  • The smallest pad that can probe: 30 um X 30 um.
Location: E6-03-02, Metrology
Availability: To be advised

Contact: e6nanofab@nus.edu.sg

IV and CV measurement for electronic devices.

Features

  • The maximum Current: 100 mA.
  • The maximum Voltage: 40 V.
  • The smallest pad that can probe: 20 um X 20 um.
Location: E6-03-02, Metrology
Availability: To be advised

Contact: e6nanofab@nus.edu.sg