Deposition and Growth
The flexibility of E6NanoFab deposition and growth equipment allows custom configuration for wide variety of application and development purposes.
Thin Film Deposition
PICOSUN ALD
- Deposition of Metal Nitrides, Oxides and sulphides
- Up to 8” wafers size
- Deposition uniformity:
> Thermal Al2O3 – 1.5%
> Plasma enhanced Al2O3 – 1.5% - High aspect ratio depositions:
> Thermal – up to 2000:1
> Plasma enhanced – up to 50:1
Target
Al2O3, HfO, ZrO and TiN.
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Location
E6-05-09, Cleanroom
Contact
e6nanofab@nus.edu.sg
System Overview
- Handle up to 8” wafers size
- High density deposition of Oxide, Nitride and amorphous Si
- Up to 8 mass flow controlled gas lines
- Stress controlled SiN process
- 240mm diameter resistance heated aluminium electrode for temperatures up to 400°C, grounded
- Electrical chamber wall heating up to 80°C minimizing chamber wall deposition
Target
SiN, SiO2, Si
Location
E6-05-09, Cleanroom
Contact
e6nanofab@nus.edu.sg
System overview
- Close proximity physical vapour deposition using magnetrons technology
- Target-to-substrate distance adjustable between 50-100mm.
- Accepts 3” diameter target size
- Accepts various sample sizes and max 8” wafer
- DC and RF sputter capability
- DC and RF substrate bias with rotation
- Confocal sputtering available
Targets
Ti, Mo, W, SiO2, Pt, ZnO
Technical specification
- Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environment
- PID temperature controller for substrate with +/- 1 degree C temp. stability
- DC sputter power up to 1500W
- RF sputter power up to 600W@ 13.56 mHz
- Substrate RF bias 110W@ 13.56 mHz with rotation
- Substrate carrier 3″ working distance adjustment (incident ion energy from 50eV to 300eV)
- Process gases, Ar, N2, O2
- Metallic, oxide and composite targets
- Build in RHEED for film deposition monitor
- Build in RGA for leak detection
- Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%
Location
E6-01-01, Cleanroom
Contact: e6nanofab@nus.edu.sg
System overview
- Able to handle up to 8” wafers size
- For deposition metals, dielectrics, super-lattices, alloys
- Substrate heating up to 800°C capable of being heated in an O2 environment
- Crystal deposition controller for co-deposition
Targets
SiO2, Pt, Al, Au, Ti, TiN, Pd,Ag
Technical specifications 
- Chamber size: 36″ high x 24″ ID
- 10 kW High Voltage Power Supplies for e-beam sourceDual-beam covering 4 crucibles for co-deposition and multi-layer deposition
- Thermal evaporation source with molybdenum resistive boats, 3kW Power Supply
- Substrate rotation and 300W RF/DC biasing (incident ion energies of 50 to 300 eV)
- PID temperature controller for substrate with +/- 1 degree C temprature stability
- Build in RGA
Location
E6-01-01, Cleanroom
Contact
Email: e6nanofab@nus.edu.sg
Model: Edward Auto 306 Turbo
Substrate size
Irregular to standard 8”dia wafer
Metals
Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.
The Application
The heating is carried out by passing a large current
through a filament container (tungsten boat or material coated tungsten rod), which has a finite electrical resistance.
Location: E6-02-08
Contact: e6nanofab@nus.edu.sg
Model: Edward Auto 306 Turbo
E-Beam Evaporation System for Metal Deposition
Substrate size
Irregular to standard 8”dia wafer.
Metals
Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum.
Crucibles
Intermetallic-IML, Graphite liner-GL and ThickWall Graphite Liner-TWGL.
Availability: To be advised
Location: E6-02-08
Contact: e6nanofab@nus.edu.sg
Material Growth
System Overview
The fully integrated MBE system allows deposition of hetero-structures and semiconductors. A II-IV and a IV group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.
Technical specifications
- Growth Chamber (Group II-IV)
- Base pressure: better than 5 x 10-10 Torr
- Effusion Cell for Chalcogen material up to 1300ºC (S, Se, Te, P)
- Electron beam gun for evaporation of transition metal (Mo, Ta, W, Hf, Zr)
- Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
- Substrate up to handle 2inch wafer,
- Heating up to1000ºC with heating rate up to 20 ºC per minute
- Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC
MBE Growth Chamber (Group IV)
- Base pressure: better than 5 x 10-10 Torr
- Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
- Electron beam gun for evaporation of carbon
- Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
- Substrate up to handle 2inch wafer,
- Heating up to1000 ºC with heating rate up to 20 ºC per minute
- Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC
Location: E6-06-01
Contact: e6nanofab@nus.edu.sg