Magnetic Processing

System Overview

The  SCIA Coat 200 is designed for homogeneous coating of high precision optics such as X-ray mirrors and optical filters with the technology of Dual Ion Beam Deposition (DIBD). The system is also equipped with a RF350-e ion beam source for etching process.

Technical Specifications

  • Cylindrical ICP ion beam source RF350-e
  • Beam diameter of 350 mm at extraction grid
  • Inductively coupled plasma (ICP) based plasma excitation with RF generator at 4.00 MHz
  • ion energy: < 100 eV; Max. ion energy: > 1500 eV
  • Ion current density up to 1 mA/cm² with flat grid system
  • Wafer chuck for 200 mm wafers
  • Substrate rotation up to 20 rpm, Substrate holder tilt between 0° – 170° in 0.1° steps
  • A standard 4-port handling robot for fully automatic handling of wafers
  • Load-lock for loading of three 200 mm wafers
  • HAL IMP 301/3F Ion Milling End Point Detection System
  • With Secondary Ion Mass Spectroscopy (SIMS), an in-situ measurement of sputtered material from substrate can be done.
  • The system is controlled by Windows 7 with fully SEMI-standard compatible software suite.
  • Etch rate: > 8 nm/min, uniformity: ≤ 8 % 3σ, reproducibility (10 runs) ≤ 3 % 3σ.
  • Deposition rate (Ta) > 6 nm/min, uniformity: ≤ 3 % 3σ , reproducibility (10 runs) ≤ 2 % 3σ

Location
E6-01-02, Class 100 Cleanroom

Contact
e6nanofab@nus.edu.sg

Magest S200 is a batch-processing type sputtering system correspond to MRAM production.

Targets: Mg, Cu, W, Fe60Co20B20, Fe90Co10, Fe80B20, Co, Pt, Ru, Ta, Ti, MgO

 

System Overview

This system consists of Autoloader, Transfer Chamber, Pre-clean Chamber , RTP Chamber & Sputter chamber sections.

  • Autoloader: Dual-arm ROBOT, Alignment station, 2 Stage cassette Interface, metal wafer stocker for 200mm wafer (25 pcs. of wafers capacity)
  • Transfer Chamber: Wafer transfer robot Keytran-IV (KRC-4000Z) Dual arm
  • Pre-clean Chamber: 2 gas Lines (Ar 100sccm, Ar 5 sccm), LT-ICP Electrode and Ceramic Shield.
    • ESC hot plate stage and RF Power supply
  • RTP Chamber: (Ar 2SLM, N2 100sccm, O2 5sccm, Ar 100sccm), Quartz Pin stage, Gold Image Furnace (9zone Lamp)
  • Sputter Chambers: The system has four sputter chambers with wafer stage rotation. Each sputter chamber has a sputter down mechanism with a permanent magnet rotation magnetron cathode. The sputter chamber can form the continual membrane of maximum of 3 layer loads “triple gun cathode”.
    • Sputter Chamber-1 (DC/RF Sputter): (Ar 100 sccm, Ar 5 sccm),
    • Sputter Chamber-2 (DC Sputter): (Ar 100 sccm, Ar 5 sccm),
    • Sputter Chamber-3 (DC Co-Sputter): (Ar 100 sccm, N2 50 sccm, Ar 5 sccm, Kr 100 sccm), ESC hot plate stage
    • Sputter Chamber-4 (DC/RF Sputter): (Ar 100 sccm, N2 100sccm, Ar 5 sccm),
    • Control System: This system is fully automatically controlled by ULVAC’s CyberCELL, and this software has a flexible design consisting of fore transfer modes: series, parallel, series/parallel and random access. Operation is performed only on a Cluster Tool Controller (CTC) that has operator—friendly-human-interface design.

Location
E6-01-02, Class 100 Cleanroom

Contact: e6nanofab@nus.edu.sg

System Overview

The Magnetic Annealing System is an 8.0 Tesla Magnetic Annealing System for pilot line and R&D usage.

Technical Specifications

• Magnetic field: 0 to 8.0 Tesla
• Wafer size: Ø2” (51 mm) circular diameter & 5 product wafers
• Wafer orientation: In plane or perpendicular to magnetic field direction
• Field homogeneity: -2/+2% over product wafers
• Field uniformity: Angle <+/-1.5° over product wafers
• Set-point accuracy: <5 mTesla
• Field stability: <0.1% of field value
• Field reproducibility: <5 mTesla
• Temperature range: 200 – 450°C
• Max wafer exit temp: 60°C
• Thermal uniformity: < ±3°C in sample volume
• Set point accuracy: ±1.5°C
• Cross wafer uniformity: ±2°C
• Cross stack uniformity: ±1.5°C

Location
E6-01-02, Class 100 Cleanroom


Contact

Email: e6nanofab@nus.edu.sg
Tel: 660 17030